* IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
* IGBT IC=100A (Tc=25°C)
* IGBT tf=80ns typ.
* Low switching loss in higher frequency applications
* Maxim.

* Maximum junction temperature Tj=175°C
* Diode VF=1.7V typ. (IF=30A)
* Diode trr=70ns typ.
* 5μs short .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts